PDTC124TK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC124TK-115 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 100 at 1mA, 5V. With a maximum power dissipation of 250 mW, it is supplied in a SMT3; MPAK package, commonly known as SOT-23-3 or TO-236-3. The integrated base resistor (R1) is specified at 22 kOhms. This transistor is utilized in various industrial and consumer electronics, including digital logic circuits and general-purpose switching applications. The Vce saturation is a maximum of 150mV at 500µA, 10mA, with a collector cutoff current of 1µA. The component is provided in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 22 kOhms |