PDTC124TE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC124TE-115 is a pre-biased NPN bipolar transistor designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA. The integrated base resistor (R1) is specified at 22 kOhms, facilitating simplified circuit design. With a typical DC current gain (hFE) of 100 at 1mA and 5V, and a low saturation voltage (Vce Sat) of 150mV at 500µA and 10mA, the PDTC124TE-115 offers efficient operation. It is provided in a compact SC-75 (SOT-416) surface-mount package, supplied on tape and reel. This transistor is suitable for use in consumer electronics, industrial control systems, and automotive applications. The maximum power dissipation is rated at 150 mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 22 kOhms |
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