PDTC124EK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The NXP USA Inc. PDTC124EK-115 is an NPN pre-biased bipolar transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current (Ic) of 100 mA. It offers a minimum DC current gain (hFE) of 60 at 5 mA collector current and 5 V Vce. The transistor includes integrated base resistors (R1 = 22 kOhms, R2 = 22 kOhms) for simplified circuit design. With a maximum power dissipation of 250 mW and a Vce saturation of 150 mV at 500 µA base current and 10 mA collector current, it is suitable for low-power switching and logic applications. The PDTC124EK-115 is supplied in a TO-236-3, SC-59, SOT-23-3 package and is available on tape and reel. This component is utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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