PDTC124EE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. NPN Pre-Biased Transistor, PDTC124EE-115. This surface mount bipolar junction transistor features an NPN configuration with integrated base resistors, R1 at 22 kOhms and R2 at 22 kOhms. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device exhibits a saturation voltage of 150mV at 500µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 60 at 5mA collector current and 5V collector-emitter voltage. The maximum power dissipation is 150mW. Supplied in SC-75 (SOT-416) packaging, this pre-biased transistor is suitable for applications in industrial controls, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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