PDTC123YK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC123YK-115 is a pre-biased NPN bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is supplied in a SMT3 (MPAK) surface mount package. The integrated base resistors are R1 at 2.2 kOhms and R2 at 10 kOhms, providing a minimum DC current gain (hFE) of 35 at 5mA collector current and 5V collector-emitter voltage. Maximum power dissipation is 250mW. This transistor is suitable for applications requiring simplified digital logic interfacing and switching, often found in consumer electronics and industrial control systems. It is provided on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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