PDTC123TE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. presents the PDTC123TE-115, an NPN pre-biased bipolar transistor designed for surface mount applications. This component, housed in an SC-75 (SOT-416) package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a typical base resistor (R1) of 2.2 kOhms, contributing to its pre-biased functionality. The transistor exhibits a maximum power dissipation of 150mW and a collector cutoff current of 1µA. With a minimum DC current gain (hFE) of 30 at 20mA and 5V, and a Vce saturation of 150mV at 500µA and 10mA, the PDTC123TE-115 is suitable for various digital logic and switching applications in industrial and consumer electronics. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 2.2 kOhms |
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