PDTC123JK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC123JK-115 is an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The integrated base resistors include R1 at 2.2 kOhms and R2 at 47 kOhms, enabling simplified circuit design. It offers a minimum DC current gain (hFE) of 100 at 10mA and 5V. The transistor exhibits a Vce saturation of 100mV at 250µA and 5mA, with a maximum collector cutoff current of 1µA. Rated for 250 mW power dissipation, this device is supplied in a Surface Mount SMT3 (MPAK) package, presented on Tape & Reel (TR). Applications include general-purpose switching and amplification in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |