PDTC123JE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC123JE-115 is an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device offers a minimum DC current gain (hFE) of 100 at 10 mA and 5 V. Saturation voltage (Vce) is specified at a maximum of 100 mV at 250 µA base current and 5 mA collector current. The transistor includes integrated base resistors R1 (2.2 kOhms) and R2 (47 kOhms). Designed for surface mounting, it is housed in an SC-75 (SOT-416) package and supplied on tape and reel. This component finds application in general-purpose switching and amplification circuits, commonly utilized in consumer electronics and industrial control systems. The maximum power dissipation is 150 mW, with a collector cutoff current of 1 µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |