PDTC123ES,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC123ES-126 is an NPN pre-biased bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features integrated base resistors, simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current capability of 100mA. The device is rated for 500mW power dissipation and comes in a TO-92-3 through-hole package suitable for automated assembly. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 20mA collector current and 5V collector-emitter voltage, and a saturation voltage of 150mV at 500µA base current and 10mA collector current. This transistor is commonly utilized in industrial automation, consumer electronics, and communication systems. The PDTC123ES-126 is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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