PDTC123EK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
NXP USA Inc. presents the PDTC123EK-115, an NPN pre-biased bipolar transistor. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It boasts a pre-biased configuration with integrated base resistors (R1 and R2) of 2.2 kOhms each, simplifying circuit design. The transistor offers a minimum DC current gain (hFE) of 30 at 20mA collector current and 5V Vce. With a maximum collector cutoff current of 1µA and a Vce saturation of 150mV at 500µA base current and 10mA collector current, it is suitable for various switching and amplification applications. The PDTC123EK-115 is supplied in a SMT3; MPAK package, designed for surface mounting, and is delivered on tape and reel (TR). This component is commonly utilized in consumer electronics, industrial automation, and automotive systems. The maximum power dissipation is 250 mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
Request a Quote
Clients Also Buy
PDTA123JE,115
TRANS PREBIAS PNP 50V 0.1A SC75
PDTA124EK,115
TRANS PREBIAS PNP 50V 0.1A SMT3
PDTD114EU135
TRANS PREBIAS
