PDTC123EE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. offers the PDTC123EE-115, an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It is supplied in an SC-75 (SOT-416) surface mount package, presented on a tape and reel. The integrated base resistors are R1 at 2.2 kOhms and R2 at 2.2 kOhms, providing a minimum DC current gain (hFE) of 30 at 20 mA and 5 V. The transistor exhibits a maximum collector cutoff current of 1 µA and a Vce saturation of 150 mV at 500 µA and 10 mA. With a maximum power dissipation of 150 mW, this component is suitable for applications in industrial controls, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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