PDTC115TK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC115TK-115 is a pre-biased NPN bipolar transistor. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The minimum DC current gain (hFE) is 100 at 1 mA collector current and 5 V collector-emitter voltage. Designed for surface mount applications, it is supplied in a SMT3; MPAK package, also known as TO-236-3, SC-59, or SOT-23-3, on tape and reel. The collector cutoff current is a maximum of 1 µA. The transistor exhibits a Vce saturation of 150 mV at 250 µA base current and 5 mA collector current. It has a maximum power dissipation of 250 mW and includes an integrated 100 kOhm base resistor. This component is suitable for use in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 100 kOhms |
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