PDTC115ES,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. offers the PDTC115ES-126, a pre-biased NPN bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 20mA. It is supplied in a TO-92-3 (TO-226-3) through-hole package and is available in Tape & Box (TB) packaging. The internal base resistor (R1) is 100 kOhms, and the emitter-base resistor (R2) is 100 kOhms, facilitating a minimum DC current gain (hFE) of 80 at 5mA and 5V. The maximum power dissipation is 500mW, with a Vce saturation of 150mV at 250µA and 5mA. Applications include industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 20 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
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