PDTC115EK,115
TRANS PREBIAS NPN 50V 0.02A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC115EK-115 is a pre-biased NPN bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 20mA. It offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V collector-emitter voltage. The transistor has a base resistor (R1) of 100 kOhms and an emitter-base resistor (R2) of 100 kOhms, facilitating simplified circuit design. With a maximum power dissipation of 250mW, it is suitable for use in consumer electronics, industrial automation, and telecommunications equipment. The PDTC115EK-115 is supplied in a SMT3 (MPAK) package on tape and reel. Collector cutoff current is a maximum of 1µA, and Vce saturation is 150mV at 250µA base current and 5mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 20 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
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