PDTC115EEF,115
TRANS PREBIAS NPN 50V SC89Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC115EEF-115 is an NPN pre-biased bipolar transistor designed for surface mounting in an SC-89 package. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 20 mA. The integrated base resistors, R1 and R2, are both 100 kOhms, providing a minimum DC current gain (hFE) of 80 at 5 mA collector current and 5 V Vce. With a maximum power dissipation of 250 mW and a Vce saturation of 150 mV at 250 µA base current and 5 mA collector current, this transistor is suitable for applications requiring simplified biasing and reduced external component count. Industries such as industrial automation, consumer electronics, and automotive systems commonly utilize this type of pre-biased transistor for switching and amplification functions. The PDTC115EEF-115 is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | SC-89 |
| Current - Collector (Ic) (Max) | 20 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
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