PDTC115EE,115
TRANS PREBIAS NPN 50V SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC115EE-115 is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 20mA. The integrated base resistors, R1 and R2, are both specified at 100 kOhms, simplifying circuit design and reducing external component count. It offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V collector-emitter voltage. The transistor's saturation voltage (Vce(sat)) is a maximum of 150mV at 250µA base current and 5mA collector current. With a maximum power dissipation of 150mW, the PDTC115EE-115 is suitable for low-power switching and amplification applications across various industrial sectors including consumer electronics and industrial automation. The device is supplied in an SC-75 (SOT-416) package and is available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 20 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
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