PDTC114YS,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC114YS-126 is an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor is designed with internal base resistors, specifically R1 at 10 kOhms and R2 at 47 kOhms, providing a minimum DC current gain (hFE) of 100 at 5 mA collector current and 5 V collector-emitter voltage. Saturation voltage is specified at a maximum of 100 mV at 250 µA base current and 5 mA collector current. The component is supplied in a TO-92-3 package with formed leads, suitable for through-hole mounting. It has a maximum power dissipation of 500 mW and a collector cutoff current of 1 µA. This device is commonly utilized in industrial and consumer electronics applications. The PDTC114YS-126 is provided in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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