PDTC114YEF,115
TRANS PREBIAS NPN 50V 0.1A SC89Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC114YEF-115 is an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Designed for surface mount applications, it is housed in an SC-89 (SOT-490) package, supplied on tape and reel. The transistor offers a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V collector-emitter voltage. Internal base resistors include R1 at 10 kOhms and R2 at 47 kOhms, with a maximum collector-emitter saturation voltage of 100mV at 250µA base current and 5mA collector current. The maximum power dissipation is 250mW. This device is commonly utilized in industrial automation, consumer electronics, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | SC-89 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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