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PDTC114YE,135

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PDTC114YE,135

TRANS PREBIAS NPN 50V 0.1A SC75

Manufacturer: NXP USA Inc.

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

NXP USA Inc.'s PDTC114YE-135 is an NPN - Pre-Biased Bipolar Transistor. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current (Ic) of 100 mA. The minimum DC current gain (hFE) is specified as 100 at 5mA collector current and 5V collector-emitter voltage. With a maximum power dissipation of 150 mW, it is designed for surface mount applications within the SC-75 (SOT-416) package. Integrated base resistors include R1 at 10 kOhms and R2 at 47 kOhms. The collector cutoff current (Max) is 1µA, and Vce saturation (Max) is 100mV at 250µA base current and 5mA collector current. This component is commonly utilized in consumer electronics and industrial automation. The product is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Supplier Device PackageSC-75
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms

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