PDTC114YE,135
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc.'s PDTC114YE-135 is an NPN - Pre-Biased Bipolar Transistor. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current (Ic) of 100 mA. The minimum DC current gain (hFE) is specified as 100 at 5mA collector current and 5V collector-emitter voltage. With a maximum power dissipation of 150 mW, it is designed for surface mount applications within the SC-75 (SOT-416) package. Integrated base resistors include R1 at 10 kOhms and R2 at 47 kOhms. The collector cutoff current (Max) is 1µA, and Vce saturation (Max) is 100mV at 250µA base current and 5mA collector current. This component is commonly utilized in consumer electronics and industrial automation. The product is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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