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PDTC114YE,115

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PDTC114YE,115

TRANS PREBIAS NPN 50V 0.1A SC75

Manufacturer: NXP USA Inc.

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

NPN Pre-Biased Transistor from NXP USA Inc., part number PDTC114YE-115. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It operates with a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V Vce. The transistor is supplied in a surface mount SC-75 (SOT-416) package, provided on tape and reel. Built-in resistors include a 10 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2), facilitating simplified circuit design. Saturation voltage is specified at 100mV maximum for 250µA base current and 5mA collector current. The maximum power dissipation is 150mW. This component is utilized in various applications including consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Supplier Device PackageSC-75
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms

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