PDTC114YE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NPN Pre-Biased Transistor from NXP USA Inc., part number PDTC114YE-115. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It operates with a minimum DC current gain (hFE) of 100 at 5mA collector current and 5V Vce. The transistor is supplied in a surface mount SC-75 (SOT-416) package, provided on tape and reel. Built-in resistors include a 10 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2), facilitating simplified circuit design. Saturation voltage is specified at 100mV maximum for 250µA base current and 5mA collector current. The maximum power dissipation is 150mW. This component is utilized in various applications including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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