PDTC114TS,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC114TS-126 is a pre-biased NPN bipolar transistor featuring a collector-emitter breakdown voltage of 50V. This device offers a maximum continuous collector current of 100mA and a power dissipation of 500mW. The integrated base resistor (R1) is 10 kOhms, and the transistor exhibits a minimum DC current gain (hFE) of 200 at 1mA and 5V. Saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current, with a collector cutoff current of 1µA. Supplied in a TO-92-3 package for through-hole mounting, this component is commonly utilized in consumer electronics and industrial control applications. The PDTC114TS-126 is provided in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 10 kOhms |