PDTC114TK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC114TK-115 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component, part of the Single, Pre-Biased Bipolar Transistors category, features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 200 at 1mA, 5V and a collector-emitter saturation voltage of 150mV at 500µA, 10mA. The 250mW maximum power dissipation and 1µA maximum collector cutoff current make it suitable for various digital logic applications and general-purpose switching. The device is supplied in an SMT3; MPAK package, delivered on tape and reel, with an integrated base resistor (R1) of 10 kOhms. This transistor is commonly utilized in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 10 kOhms |
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