PDTC114TEF,115
TRANS PREBIAS NPN 50V 0.1A SC89Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC114TEF-115 is a pre-biased NPN bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a power dissipation of 150 mW, it is suitable for low-power switching and amplification tasks. The integrated base resistor (R1) is 10 kOhms, facilitating simplified circuit design. The transistor exhibits a minimum DC current gain (hFE) of 200 at 1 mA collector current and 5 V Vce. Saturation voltage (Vce Sat) is specified at a maximum of 150 mV for 500 µA base current and 10 mA collector current. Packaged in an SC-89 (SOT-490) case and supplied on tape and reel, this device finds application in various consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Supplier Device Package | SC-89 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 10 kOhms |
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