PDTC114TE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC114TE-115 is an NPN pre-biased bipolar transistor in an SC-75 (SOT-416) surface-mount package. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current (Ic) of 100 mA. The integrated base resistor (R1) is 10 kOhms, providing a minimum DC current gain (hFE) of 200 at 1 mA collector current and 5 V collector-emitter voltage. Maximum power dissipation is 150 mW. The transistor exhibits a Vce saturation voltage of 150 mV at 500 µA base current and 10 mA collector current. This device is designed for applications in consumer electronics and industrial control systems requiring simplified switching and logic functions. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 10 kOhms |
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