PDTC114ES,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC114ES-126 is an NPN pre-biased bipolar transistor designed for through-hole mounting in a TO-92-3 package. This component features integrated base resistors, R1 at 10 kOhms and R2 at 10 kOhms, simplifying circuit design. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor exhibits a maximum power dissipation of 500 mW and a saturation voltage of 150 mV at 500 µA base current and 10 mA collector current. The minimum DC current gain (hFE) is 30 at 5 mA collector current and 5 V collector-emitter voltage. The current collector cutoff is a maximum of 1 µA. This device is commonly utilized in industrial automation, automotive systems, and consumer electronics for switching and amplification applications. Packaging is supplied in Tape & Box.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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