PDTC114EK,135
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC114EK-135 is an NPN pre-biased bipolar transistor designed for surface-mount applications. This SMT3 packaged device offers a Collector-Emitter Breakdown Voltage of 50 V and a maximum Collector Current of 100 mA. It features integrated base resistors (R1 and R2) of 10 kOhms each, simplifying circuit design. The transistor exhibits a minimum DC Current Gain (hFE) of 30 at 5 mA collector current and 5 V collector-emitter voltage. Maximum power dissipation is 250 mW. The device is supplied in Tape & Reel packaging. This component is commonly utilized in industrial control, consumer electronics, and automotive applications requiring compact, integrated switching solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |