PDTB123TK,115
TRANS PREBIAS PNP 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTB123TK-115 is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current (Ic) of 500 mA. The integral base resistor (R1) is 2.2 kOhms, and the device offers a minimum DC current gain (hFE) of 100 at 50 mA and 5 V. With a maximum power dissipation of 250 mW and a Vce saturation of 300mV at 2.5mA and 50mA, it is suitable for applications requiring simplified biasing. The PDTB123TK-115 is packaged in SMT3 (MPAK) and supplied on tape and reel. This transistor finds utility in various industrial and consumer electronics, including switching and amplification circuits where a discrete pre-biased transistor is advantageous.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
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