PDTB123ES,126
TRANS PREBIAS PNP 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTB123ES-126 is a PNP pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. The device is available in a TO-92-3 package with formed leads, suitable for through-hole mounting. It is supplied in Tape & Box packaging. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 50 mA and 5 V, and a saturation voltage (Vce) of 300 mV at 2.5 mA and 50 mA. The integrated base resistors are specified as 2.2 kOhms for R1 and 2.2 kOhms for R2. This transistor is designed for applications requiring simple switching and amplification functions, commonly found in consumer electronics and industrial control systems. The maximum power dissipation is 500 mW.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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