PDTB123EK,115
TRANS PREBIAS PNP 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTB123EK-115 is a PNP pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. The integrated base resistors, R1 and R2, are both specified at 2.2 kOhms, facilitating simplified circuit design. It offers a minimum DC current gain (hFE) of 40 at 50 mA collector current and 5 V Vce. The transistor has a Vce saturation of 300 mV at 2.5 mA base current and 50 mA collector current, with a maximum power dissipation of 250 mW. The device is supplied in an SMT3 (MPAK) package, 2.3mm x 2.8mm x 0.9mm, on tape and reel. Applications include general switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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