PDTB113ZS,126
TRANS PREBIAS PNP 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
NXP USA Inc. PDTB113ZS-126 is a PNP pre-biased bipolar transistor. This through-hole component, packaged in a TO-92-3 (TO-226-3) with formed leads, features a collector-emitter breakdown voltage of 50 V. It offers a maximum collector current (Ic) of 500 mA and a maximum power dissipation of 500 mW. The device includes an internal base resistor (R1) of 1 kOhms and an emitter-base resistor (R2) of 10 kOhms, simplifying circuit design by eliminating the need for external biasing resistors. With a minimum DC current gain (hFE) of 70 at 50 mA and 5 V, and a Vce saturation of 300 mV at 2.5 mA and 50 mA, the PDTB113ZS-126 is suitable for various applications including digital logic circuits, switching, and general-purpose amplification. This component is commonly found in industrial automation, consumer electronics, and telecommunications equipment. It is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
PDTA123JE,115
TRANS PREBIAS PNP 50V 0.1A SC75
PDTA124EK,115
TRANS PREBIAS PNP 50V 0.1A SMT3
PDTD114EU135
TRANS PREBIAS
