PDTB113ZK,115
TRANS PREBIAS PNP 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTB113ZK-115 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It offers a typical DC current gain (hFE) of 70 at 50mA and 5V, with a saturation voltage (Vce Sat) of 300mV at 2.5mA collector current. The integrated base resistors are R1 at 1 kOhms and R2 at 10 kOhms. The device is rated for a maximum power dissipation of 250mW. The PDTB113ZK-115 is supplied in an SMT3 MPAK package, delivered on tape and reel. This transistor is commonly utilized in industrial and consumer electronics for switching and amplification tasks.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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