PDTB113ES,126
TRANS PREBIAS PNP 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTB113ES-126 is a PNP pre-biased bipolar transistor designed for general-purpose switching and amplification. This component features integrated base resistors (R1 = 1 kOhm, R2 = 1 kOhm), simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 500mA, with a maximum power dissipation of 500mW. The transistor exhibits a minimum DC current gain (hFE) of 33 at 50mA and 5V. Saturation voltage is specified at 300mV at 2.5mA base current and 50mA collector current. The PDTB113ES-126 is supplied in a TO-92-3 through-hole package, suitable for applications in consumer electronics, industrial control, and communication systems. Packaging is provided on Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
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