PDTA144WE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA144WE-115 is a PNP pre-biased bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features integrated base resistors, simplifying circuit design and reducing component count. The PDTA144WE-115 offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is supplied in a compact SC-75 (SOT-416) surface-mount package, ideal for space-constrained designs. Key electrical parameters include a minimum DC current gain (hFE) of 60 at 5mA collector current and 5V Vce, and a Vce saturation of 150mV at 500µA base current and 10mA collector current. The internal base resistors are specified as 47 kOhms (R1) and 22 kOhms (R2). This device is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment. The PDTA144WE-115 is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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