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PDTA144TS,126

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PDTA144TS,126

TRANS PREBIAS PNP 50V TO92-3

Manufacturer: NXP USA Inc.

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. PDTA144TS-126 is a PNP pre-biased bipolar transistor designed for through-hole mounting. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor offers a typical DC current gain (hFE) of 100 at 1mA, 5V, and a base resistor (R1) value of 47 kOhms. Power dissipation is rated at 500 mW. The Vce saturation is a maximum of 150mV at 500µA, 10mA. This device is supplied in a TO-92-3 package, presented in Tape & Box (TB) packaging. The PDTA144TS-126 is utilized in applications such as digital logic, driver circuits, and general-purpose switching across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
Resistor - Base (R1)47 kOhms

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