PDTA144TE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA144TE-115, a PNP pre-biased bipolar transistor, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. This device features an integrated base resistor (R1) of 47 kOhms, simplifying circuit design and reducing component count. The transistor type is PNP with pre-bias, ensuring a defined quiescent operating point. Its DC current gain (hFE) is a minimum of 100 at 1mA collector current and 5V Vce. The PDTA144TE-115 is packaged in an SC-75 (SOT-416) surface mount package, suitable for high-density printed circuit boards. Maximum power dissipation is rated at 150 mW. This component finds application in various industrial and consumer electronics, including digital logic level shifting and interface circuits. It is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 47 kOhms |
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