PDTA143ZK,135
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PNP Pre-Biased Transistor, PDTA143ZK-135. This PNP bipolar junction transistor (BJT) features integrated base resistors (R1: 4.7 kOhms, R2: 47 kOhms) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The device dissipates a maximum power of 250 mW. Collector cutoff current is specified at a maximum of 1 µA, with a minimum DC current gain (hFE) of 100 at 10 mA collector current and 5 V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 100 mV at 250 µA base current and 5 mA collector current. The PDTA143ZK-135 is supplied in a SMT3 (MPAK) package, specifically TO-236-3, SC-59, SOT-23-3, for surface mounting. Packaging is provided on tape and reel (TR). This component is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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