PDTA143ZE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The NXP USA Inc. PDTA143ZE-115 is a PNP pre-biased bipolar transistor. This surface mount device, housed in an SC-75 (SOT-416) package, offers a Collector-Emitter Breakdown Voltage of 50 V and a maximum Collector Current (Ic) of 100 mA. It features an integrated base resistor (R1) of 4.7 kOhms and an emitter base resistor (R2) of 47 kOhms. The transistor exhibits a typical DC Current Gain (hFE) of 100 at 10mA and 5V, with a Vce Saturation of 100mV at 250µA and 5mA. Maximum power dissipation is rated at 150 mW. This component is commonly utilized in industrial automation, medical devices, and consumer electronics applications. The PDTA143ZE-115 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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