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PDTA143XS,126

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PDTA143XS,126

TRANS PREBIAS PNP 50V TO92-3

Manufacturer: NXP USA Inc.

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. PDTA143XS-126 is a PNP pre-biased bipolar transistor designed for general-purpose switching and amplification applications. Featuring a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, this component offers a power dissipation of 500mW. The integrated base resistors, R1 (4.7 kOhms) and R2 (10 kOhms), simplify circuit design by eliminating the need for external biasing components. It exhibits a minimum DC current gain (hFE) of 50 at 10mA collector current and 5V Vce. The saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current. This device is housed in a standard TO-92-3 (TO-226-3) package with formed leads, suitable for through-hole mounting. The PDTA143XS-126 is commonly utilized in consumer electronics, industrial control systems, and automotive applications. Packaging is provided in Tape & Box (TB).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)10 kOhms

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