PDTA143XE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA143XE-115 is a PNP pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is supplied in a surface mount SC-75 (SOT-416) package, delivered on tape and reel. The transistor incorporates internal base resistors, with R1 specified at 4.7 kOhms and R2 at 10 kOhms, simplifying circuit design. Maximum power dissipation is rated at 150mW. Typical applications include general purpose switching and amplification, widely utilized in consumer electronics and industrial automation. Its Vce saturation is a maximum of 150mV at 500µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 50 at 10mA collector current and 5V Vce. Collector cutoff current is a maximum of 1µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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