PDTA143EE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA143EE-115 is a PNP pre-biased bipolar junction transistor. This component features internal base resistors, R1 (4.7 kOhms) and R2 (4.7 kOhms), facilitating simplified circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 30 at 10mA collector current and 5V collector-emitter voltage. Maximum power dissipation is rated at 150mW. The device comes in a SC-75 (SOT-416) surface-mount package, supplied on tape and reel (TR). Typical applications include switching and amplification circuits, often found in industrial control systems and consumer electronics. Collector cutoff current is a maximum of 1µA. Saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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