PDTA124TS,126
TRANS PREBIAS PNP 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA124TS-126 is a PNP, pre-biased bipolar transistor designed for general-purpose switching and amplification applications. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is supplied in a TO-92-3 through-hole package with a maximum power dissipation of 500mW. The integrated base resistor (R1) is 22 kOhms, contributing to simplified circuit design. Key electrical parameters include a minimum DC current gain (hFE) of 100 at 1mA, 5V, and a saturation voltage (Vce Sat) of 150mV at 500µA, 10mA. This component is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment requiring efficient signal control and conditioning. The part is provided in Tape & Box (TB) packaging for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 22 kOhms |
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