PDTA124TK,115
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PNP - Pre-Biased Transistor, PDTA124TK-115, features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. This component offers a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage. It includes an integrated base resistor (R1) of 22 kOhms. The device is packaged in a TO-236-3, SC-59, SOT-23-3 (SMT3; MPAK) footprint, suitable for surface mounting and supplied on tape and reel. With a maximum power dissipation of 250mW, this transistor is commonly utilized in applications such as digital logic, control circuits, and signal conditioning within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 22 kOhms |
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