PDTA124EK,115
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. presents the PDTA124EK-115, a PNP pre-biased bipolar transistor. This device is designed for surface mount applications, housed in an SMT3; MPAK package (TO-236-3, SC-59, SOT-23-3). It features a collector current capability of up to 100 mA and a collector-emitter breakdown voltage of 50 V. The integrated base resistors, R1 and R2, are both rated at 22 kOhms, simplifying circuit design. With a maximum power dissipation of 250 mW and a Vce saturation of 150mV @ 500µA, 10mA, this transistor is well-suited for applications requiring precise signal control in areas such as industrial automation and consumer electronics. The DC current gain (hFE) is a minimum of 60 at 5mA, 5V, and the collector cutoff current is a maximum of 1µA. This component is supplied on a Tape & Reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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