PDTA124EE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
NXP USA Inc. presents the PDTA124EE-115, a PNP pre-biased bipolar transistor. Engineered for efficient switching and amplification, this component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistors (R1 = 22 kOhms, R2 = 22 kOhms) simplify circuit design by providing a fixed bias. With a maximum power dissipation of 150mW, it is suitable for surface mount applications utilizing the SC-75 (SOT-416) package. The PDTA124EE-115 exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 5V Vce. Its saturation voltage is specified at a maximum of 150mV at 500µA base current and 10mA collector current. This transistor is commonly utilized in industrial control, consumer electronics, and communication systems. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
Request a Quote
Clients Also Buy
PDTA123TK,115
TRANS PREBIAS PNP 50V 0.1A SMT3
PDTA143EEF,115
TRANS PREBIAS PNP 50V 0.1A SC89
PDTC143TE,115
TRANS PREBIAS NPN 50V 0.1A SC75
