PDTA123YS,126
TRANS PREBIAS PNP 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA123YS-126 is a PNP, pre-biased bipolar junction transistor. This through-hole component features a TO-92-3 package with formed leads and is supplied on tape and box. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor has a maximum power dissipation of 500mW. Key electrical characteristics include a minimum DC current gain (hFE) of 35 at 5mA collector current and 5V collector-emitter voltage. The integrated base resistors are R1 at 2.2 kOhms and R2 at 10 kOhms. Collector cutoff current is a maximum of 1µA. This device is suitable for applications within the telecommunications and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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