PDTA123YK,115
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA123YK-115 is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. Featuring integrated base resistors of 2.2 kOhms (R1) and 10 kOhms (R2), this component simplifies circuit design by eliminating external biasing components. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor exhibits a minimum DC current gain (hFE) of 35 at 5 mA collector current and 5 V collector-emitter voltage. With a maximum power dissipation of 250 mW, it is suitable for low-power switching and amplification circuits. Typical saturation voltage at 500 µA base current and 10 mA collector current is 150 mV. The device is supplied in a Tape & Reel (TR) package, specifically the SMT3; MPAK (TO-236-3, SC-59, SOT-23-3) footprint. This component is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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