PDTA123TE,115
TRANS PREBIAS PNP 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA123TE-115 is a PNP pre-biased bipolar junction transistor (BJT). This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistor (R1) is 2.2 kOhms, facilitating simplified circuit design. With a maximum power dissipation of 150mW, it is supplied in an SC-75 (SOT-416) surface-mount package, presented on tape and reel. The device exhibits a minimum DC current gain (hFE) of 30 at 20mA and 5V. Collector cutoff current is specified at a maximum of 1µA. Saturation voltage (Vce(sat)) is a maximum of 150mV at 500µA base current and 10mA collector current. This transistor is suitable for applications in consumer electronics and industrial control systems where simplified biasing and reduced component count are advantageous.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 2.2 kOhms |
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