PDTA123JK,115
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA123JK-115 is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter voltage breakdown of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 at 2.2 kOhms and R2 at 47 kOhms, simplify circuit design by eliminating the need for external biasing components. With a maximum power dissipation of 250mW and a Vce saturation of 100mV @ 250µA, 5mA, it offers efficient operation. The transistor exhibits a minimum DC current gain (hFE) of 100 at 10mA, 5V. Supplied in SMT3 (MPAK) packaging, this device is commonly utilized in industrial automation, consumer electronics, and communication systems. The PDTA123JK-115 is delivered in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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