PDTA123EK,115
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTA123EK-115 is a PNP pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The transistor incorporates integrated base resistors, with R1 and R2 specified at 2.2 kOhms, simplifying circuit design. It offers a minimum DC current gain (hFE) of 30 at 20 mA and 5 V. The device exhibits a saturation voltage (Vce Sat) of 150 mV at 500 µA base current and 10 mA collector current. With a maximum power dissipation of 250 mW, it is suited for surface mount applications. The PDTA123EK-115 is packaged in a TO-236-3, SC-59, or SOT-23-3 (SMT3; MPAK) configuration, supplied on tape and reel. This component finds application in various industrial and consumer electronics, including signal switching and amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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