PDTA115TK,115
TRANS PREBIAS PNP 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The NXP USA Inc. PDTA115TK-115 is a PNP pre-biased bipolar transistor designed for surface mount applications within the SMT3 (MPAK) package. Featuring a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, this component offers a power dissipation of 250mW. The integrated base resistor (R1) is specified at 100 kOhms, contributing to its pre-biased functionality. DC current gain (hFE) is a minimum of 100 at 1mA collector current and 5V Vce. Collector cutoff current is a maximum of 1µA. Saturation voltage (Vce Sat) is a maximum of 150mV at 0.25mA base current and 5mA collector current. Applications include consumer electronics and industrial control systems. The part is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 100 kOhms |
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